Title :
The design of interface ASIC based on ring Schottky diode for MEMS gyroscope
Author :
Shen, G.C. ; Lu, W.G. ; Liu, M.X. ; Li, X.L. ; Hu, J.R. ; Wu, F. ; Zhang, Y.C. ; Chen, Z.J.
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
This paper describes the interface ASIC based on ring Schottky diode and TIA for MEMS gyroscope. The basic structure of interface ASIC is analyzed theoretically. 2MHz carrier is used to exert the mass and modulates the vibrational signal of MEMS gyroscope. This can amplify vibration signal by the frequency of carrier. The circuit is implemented in 0.18μm CMOS process and its size is 1.5×2.3mm2.
Keywords :
CMOS integrated circuits; Schottky diodes; application specific integrated circuits; gyroscopes; integrated circuit design; microsensors; vibration measurement; ASIC interface; CMOS process; MEMS gyroscope; TIA; frequency 2 MHz; ring Schottky diode; size 0.18 mum; vibrational signal modulation; CMOS integrated circuits; Gyroscopes; MEMS gyroscope; TIA; interface ASIC; ring Schottky diode;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061269
