Title :
Epitaxial graphene FETs on sapphire substrate
Author :
Liu, Q.B. ; Yu, C. ; Li, J. ; He, Z.Z. ; Song, X.B. ; Lu, W.L. ; Feng, Z.H.
Author_Institution :
Nat. Key Lab. of Applic. Specific Integrated Circuit (ASIC), Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
In this letter, we report the first wafer-scale epitaxial graphene field-effect transistor (FET) grown and fabricated on 2-inch sapphire (0001) substrate by chemical vapor deposition (CVD) without a metal catalyst. The monolayer structure of the epitaxial graphene was confirmed by Raman spectra. Room temperature Hall effect mobility was 1,500 cm2/V·s. The maximum drain source current (Ids) of 0.78 A/mm and peak transconductance of 0.13 S/mm were obtained at Vds = -1 V for the graphene FET with gate length of 100 nm. The cutoff frequency (fT) and maximum oscillation frequency (fmax) reached 24 GHz and 26 GHz after de-embedding, respectively, which are the first epitaxial graphene-on-sapphire FET showing RF performance. Our work proves out the promise of epitaxial graphene on sapphire substrate.
Keywords :
Hall mobility; Raman spectra; chemical vapour deposition; epitaxial growth; graphene devices; microwave field effect transistors; sapphire; CVD; Hall effect mobility; RF performance; Raman spectra; chemical vapor deposition; frequency 24 GHz; frequency 26 GHz; graphene-on-sapphire FET; monolayer structure; size 100 nm; size 2 inch; temperature 293 K to 298 K; voltage -1 V; wafer-scale epitaxial graphene field-effect transistor; Artificial intelligence; Atomic layer deposition; Epitaxial growth; Field effect transistors; Graphene; Logic gates; Silicon carbide; RF performance; epitaxial graphene; field-effect transistor (FET); sapphire substrates; transconductance;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061273
