Title :
High-temperature general purpose operational amplifier in IBM 0.13 µm CMOS process
Author :
Yucai Wang ; Chodavarapu, Vamsy P.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We present a high-temperature general purpose operational amplifier that can operate at an ambient temperature of 200°C. The amplifier is implemented in IBM CMOS 0.13μm process with 2.5V power supply. A constant-gm biasing technique is used to stabilize the gain and bandwidth variation the over wide temperature range. From 25°C to 200°C, the measured DC gain variation is 5.2dB. At 200°C, the amplifier has DC gain of 57.4dB driving 2pF capacitance load and consumes 0.56mW of average power.
Keywords :
CMOS integrated circuits; high-temperature techniques; operational amplifiers; CMOS process; bandwidth variation; constant-gm biasing technique; gain 5.2 dB; gain 57.4 dB; gain variation; high-temperature general purpose operational amplifier; power 0.56 mW; size 0.13 mum; temperature 200 degC; voltage 2.5 V; CMOS integrated circuits; Sensors; CMOS; amplifier; high-temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061279
