Design of low-voltage CMOS amplifier with high EMI immunity

Author

Huixin Bai ; Hongge Li ; Shuguo Xie ; Donglin Su

Author_Institution

Sch. of Electron. & Inf. Eng., Beihang Univ., Beijing, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

A low-voltage bulk-driven amplifier with high electromagnetic interference (EMI) immunity is proposed. To improve EMI immunity of the bulk-driven amplifier, a partial positive feedback enhances its equivalent transconductance, an input voltage-drop structure modifies its DC nonlinearity, and a dual input-stage ensures the desired AC feature. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier: the offset voltage is less than 50mV over the whole considered frequency range.

Keywords

CMOS analogue integrated circuits; amplifiers; electromagnetic interference; integrated circuit reliability; DC nonlinearity; equivalent transconductance; high EMI immunity; high electromagnetic interference immunity; low-voltage CMOS amplifier; low-voltage bulk-driven amplifier; voltage-drop structure; CMOS integrated circuits; Electromagnetic interference; Logic gates; Robustness; Transconductance; DC nonlinearity; bulk-driven amplifier; electromagnetic interference (EMI) immunity; low-voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061280

Filename

7061280