Title :
A new analytical model for junctionless cylindrical surrounding-gate MOSFETs
Author :
Cong Li ; Yiqi Zhuang ; Ping Wang ; Zhi Jiang ; Li Zhang
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
Based on the parabolic approximation, a new analytical model for junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is presented. The influence of transition between depleted channel and the source/drain neutral region on the channel´s potential is considered in presented model. Using this analytical model, the electrostatic potential of JLCSG MOSFETs is investigated. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.
Keywords :
MOSFET; approximation theory; electrostatics; JLCSG; electrostatic potential; junctionless cylindrical surrounding-gate MOSFET; parabolic approximation; source-drain neutral region; three-dimensional numerical device simulator ISE; Analytical models; MOSFET; Mathematical model; Semiconductor device modeling; analytical model; junctionless; numerical simulation; surrounding-gate;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061285
