Title :
A 300 GHz planar balanced quadrupler
Author :
Chen Aiping ; Zhao Ming
Author_Institution :
Chengdu Univ. of Inf. Technol., Chengdu, China
Abstract :
A 300 GHz quadrupler has been developed use AS1 Schottky diode. The quadrupler use the balanced planar diode configuration. The diode n-layer and n+-layer conductivity are given by GaAs semiconductor doping theory. Rs is given combined low-frequency simulation with empirical formula. The linear region is simulated in the HFSS, the S-parameter is imported into in the ADS. The quadrupler exhibits that the highest simulated efficiency is 7% at 306 GHz and the typical efficiency is 3% from 300 GHz to 308GHz.
Keywords :
S-parameters; Schottky diodes; millimetre wave diodes; semiconductor device models; semiconductor doping; AS1 Schottky diode; GaAs; GaAs semiconductor doping; S-parameter; balanced planar diode configuration; efficiency 3 percent; efficiency 7 percent; empirical formula; frequency 300 GHz to 308 GHz; low-frequency simulation; n+-layer conductivity; planar balanced quadrupler; Gallium arsenide; Harmonic analysis; Mathematical model; Power generation; Power harmonic filters; Schottky diodes; 300GHz; HFSS+ADS; Schottky-diode; quadrupler;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062202
