Title :
Dual-gate GaN-HEMT SPDT switch with high isolation
Author :
Qian Li ; Wenquan Che ; Haidong Chen ; Liming Gu ; Wenjie Feng
Author_Institution :
Dept. of Commun. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
In this work, an analytical approach to the design of high isolation dual-gate GaN-HEMT single-pole double-throw (SPDT) switches is presented. An R-C-R circuit is used as a band-rejection filter at the specified frequency in the OFF-state in order to realize the high isolation performance. Simulated performance of a complete SPDT using the proposed approach is presented. From DC to 3 GHz, the simulated isolation is 10 dB higher than the case without R-C-R circuit type, demonstrating the approach feasibility and effectiveness.
Keywords :
III-V semiconductors; band-stop filters; gallium compounds; high electron mobility transistors; semiconductor switches; wide band gap semiconductors; GaN; band-rejection filter; dual-gate HEMT SPDT switch; single-pole double-throw switches; Capacitance; HEMTs; Insertion loss; Resistance; Switches; Switching circuits; GaN-HEMT; SPDT; dual-gate; high isolation;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062236
