DocumentCode
3578374
Title
W band power amplifier based on 1 µm InP DHBT
Author
Oupeng Li ; Wei Cheng ; Lei Wang ; Haiyan Lu ; Ruimin Xu
Author_Institution
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2014
Firstpage
180
Lastpage
182
Abstract
In this paper, a W-band power amplifier (PA) is presented by using 1 μm emitter length InP/InGaAs DHBT technology. The PA is consisted by 2 stages cascode cells and a common-emitter cell. The total circuit achieves more than 14 dB associate gain from 90 GHz to 98 GHz with input return loss greater than 30 dB and output return loss greater than 7 dB. The saturation output power reaches 18.5 dBm at 94 GHz. The chip area is 1.5 mm×1.1 mm.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; InP-InGaAs; InP-InGaAs DHBT technology; W band power amplifier; cascode cells; common-emitter cell; frequency 90 GHz to 98 GHz; size 1 mum; DH-HEMTs; Gain; Indium phosphide; Integrated circuit interconnections; Integrated circuit modeling; Metals; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN
978-1-4799-4246-6
Type
conf
DOI
10.1109/ICCPS.2014.7062247
Filename
7062247
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