Title :
A large signal SDD model for InP DHBT
Author :
Oupeng Li ; Wei Cheng ; Lei Wang ; Haiyan Lu ; Ruimin Xu
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.
Keywords :
III-V semiconductors; S-parameters; heterojunction bipolar transistors; indium compounds; semiconductor device models; Agilent ADS; DHBT; InP; Kirk effect; S parameters; base collector capacitance; collector transit time; double heterojunction bipolar transistors; large signal SDD model; soft knee effect; symbolically defined device; DH-HEMTs; Equations; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Junctions; Mathematical model;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062248
