Title :
Simulation and design of Ku band power amplifier based on GaN HEMT
Author :
Hengjin Li ; Dalong Zhu ; Dexi Liu
Author_Institution :
Beijing Res. Institue of Telemetry, Beijing, China
Abstract :
A Ku band solid state power amplifier was designed with a GaN HEMT large signal model in this paper. The circuits, which include input matching network, output matching network and bias network, were simulated with commercial software. An entire simulation model of the power amplifier was then established for some key performance. The result shows that output power higher than 45.3dBm, power gain greater than 7.3dB and PAE(power added efficiency) over 30% during 13.3GHz ~13.7GHz.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; semiconductor device models; wide band gap semiconductors; GaN; Ku band solid state power amplifier design; PAE; bias network; commercial software; frequency 13.3 GHz to 13.7 GHz; gallium nitride HEMT large-signal model; input matching network; output matching network; power added efficiency; simulation model; Bonding; Gallium nitride; HEMTs; Impedance; Microstrip; Power amplifiers; Wires; GaN HEMT; Ku band; power amplifier;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062253
