InP DHBT submillimeter-wave modeling based on electromagnetic simulation method

Author

Oupeng Li ; Wei Cheng ; Lei Wang ; Haiyan Lu ; Ruimin Xu

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

Firstpage

227

Lastpage

229

Abstract

In this paper, a novel large-signal InP DHBT model upto Submillimeter-wave frequencies is proposed. The intrinsic part of HBT based on the improved agilentHBT model and EM simulation technique is presented to account for the distributed effect of interconnection of the fingers and their surroundings. The combined model implemented in Agilent-ADS is verified by comparing the simulated and measured data in dc and multi bias S-parameters. Good agreement between the measured and the simulated result has been demonstrated.

Keywords

S-parameters; electromagnetic interference; electromagnetic wave propagation; heterojunction bipolar transistors; interconnections; semiconductor device metallisation; semiconductor device models; semiconductor device noise; submillimetre wave transistors; Agilent-ADS; AgilentHBT model; DC parameter; DHBT submillimeter wave modeling; InP; double heterojunction bipolar transistor; electromagnetic simulation method; interconnection distributed effect; multibias S-parameter; Bipolar transistors; Current measurement; DH-HEMTs; Data models; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Problem-Solving (ICCP), 2014 IEEE International Conference on

Print_ISBN

978-1-4799-4246-6

Type

conf

DOI

10.1109/ICCPS.2014.7062259

Filename

7062259