DocumentCode
3578391
Title
Research on a 0°∼360° FET analog phase shifter of x-band
Author
Huiyu Li ; MeiYing Wei ; Guang Hua ; Wei Li
Author_Institution
Radio Monitoring Div., State Radio Monitoring Center, Beijing, China
fYear
2014
Firstpage
246
Lastpage
249
Abstract
In this paper, the design of the 0°~360° FET analog phase shifter is presented. By changing the gate voltages of the FET transistors, the output amplitudes of the four orthometric vector signals of the phase shifter can be independently adjusted. In this way, any phase shift over the range of 0° to 360° can be achieved. Due to the amplification characteristic of the FET transistors, the designed phase shifter has a gain rather than insertion loss. The gate voltages of the FETs are controlled by a microcontroller. Within the bandwidth of 400MHz (9.8GHz~10.2GHz), the designed and fabricated 0°~360° phase shifter´s input and output VSWRs are less than 2:1, the phase error is less then ±3°, and the in-band gain is about 7±0.5dB.
Keywords
HEMT circuits; high electron mobility transistors; microwave field effect transistors; microwave phase shifters; FET analog phase shifter; X-band phase shifter; amplification characteristic; bandwidth 400 MHz; frequency 9.8 GHz to 10.2 GHz; microcontroller; orthometric vector signals; Broadband antennas; Field effect transistors; Logic gates; Phase shifters; Vectors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN
978-1-4799-4246-6
Type
conf
DOI
10.1109/ICCPS.2014.7062264
Filename
7062264
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