Title :
Modeling the radiated emissions from microprocessors and other VLSI devices
Author :
Slattery, Kevin P. ; Muccioli, James P. ; North, Terry M.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
This paper presents a heuristic model for describing radiated emissions from microprocessors by considering the emissions spectrum to be that of an excited, or driven, electron gas. The main idea is derived from a modification of the classical Maxwell-Boltzmann distribution of molecular velocities in an ideal gas. In this paper, that procedure is applied to the free electrons in a conducting surface, where the electrons are assumed to be in a gas state residing over the surface of the conductor. Using the conductor volume, and the excitation signal characteristics, a distribution is found that roughly corresponds to measured distributions found in microprocessors. The derived equation is applied for each event risetime, I/O switching and internal switching, and summed
Keywords :
VLSI; electromagnetic interference; electron gas; integrated circuit measurement; microprocessor chips; statistical mechanics; I/O switching; IC radiated emissions measurement; Maxwell-Boltzmann distribution; PCB; Society of Automotive Engineers; TEM cell; VLSI devices; conducting surface; conductor volume; driven electron gas; emissions spectrum; event risetime; excitation signal characteristics; excited electron gas; free electrons; heuristic model; ideal gas; internal switching; measured distributions; microprocessors; molecular velocities; radiated emission modeling; Application specific integrated circuits; Automotive engineering; Conductors; Electrons; Frequency; Integrated circuit measurements; Maxwell equations; Microprocessors; TEM cells; Very large scale integration;
Conference_Titel :
Electromagnetic Compatibility, 2000. IEEE International Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-5677-2
DOI :
10.1109/ISEMC.2000.875556