DocumentCode
3578433
Title
Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting
Author
Yongzhi Wu ; Kun Ren ; Jun Liu ; Cheng Wei ; Lu Haiyan
Author_Institution
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
fYear
2014
Firstpage
405
Lastpage
408
Abstract
A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector fitting (VF) method The model renders excellent agreement with the measured and simulated data over 1 to 100 GHz, for a 2×150μm GaAs HEMT device manufactured in CETC-55 150nm GaAs pHEMT technology.
Keywords
III-V semiconductors; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; CETC-55 GaAs pHEMT technology; GaAs; III-V HEMTs small-signal model parameter extraction; frequency 1 GHz to 100 GHz; hot S-parameters; size 150 nm; small-signal equivalent circuit model; vector fitting; Equivalent circuits; Fitting; Gallium arsenide; HEMTs; Integrated circuit modeling; MODFETs; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN
978-1-4799-4246-6
Type
conf
DOI
10.1109/ICCPS.2014.7062306
Filename
7062306
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