DocumentCode
3578452
Title
An efficient model for the on-chip CPWs in GaAs technology
Author
Fei Fu ; Xiang Wang ; Jun Liu ; Lingling Sun
Author_Institution
Key Lab. for RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
fYear
2014
Firstpage
477
Lastpage
479
Abstract
An efficient and accurate model accounting for the skin and proximity effect is proposed in this paper, and a novel parameter extraction method, based on empirical formulas and measured data, is given subsequently. Several standard coplanar waveguides (CPWs) of different lengths are fabricated in GaAs technology. The per-unit-length (p.u.l.) L, C and S-parameters are compared. Up to 67GHz, the proposed model is in better agreement with the measured data than the simulated results.
Keywords
III-V semiconductors; S-parameters; coplanar waveguides; gallium arsenide; millimetre wave integrated circuits; proximity effect (lithography); C-parameters; GaAs; GaAs technology; L-parameters; S-parameters; coplanar waveguides; on-chip CPW; parameter extraction method; proximity effect; Conductors; Coplanar waveguides; Data models; Integrated circuit modeling; Mathematical model; Metals; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN
978-1-4799-4246-6
Type
conf
DOI
10.1109/ICCPS.2014.7062325
Filename
7062325
Link To Document