Title :
Progress and opportunities in InP HBT terahertz monolithic integrated circuits
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The terahertz wave is a very significant cross-frontier field. While the rapid progress on characteristic frequency of over-600GHz InP-based integrated circuit technology, it provides process foundation for solid-state terahertz circuits and system with high performance and high integration. The overview is made on the research progress of solid-state terahertz amplifiers, and the device modeling and de-embedding technique are also discussed. Finally, the progress and trend of terahertz monolithic integrated circuit (TMIC) technology in China is demonstrated.
Keywords :
III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; InP; InP HBT terahertz monolithic integrated circuits; InP-based integrated circuit technology; TMIC technology; deembedding technique; device modeling; process foundation; solid-state terahertz amplifiers; solid-state terahertz circuits; terahertz monolithic integrated circuit technology; terahertz wave; Calibration; DH-HEMTs; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Microwave amplifiers; Microwave integrated circuits;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062361
