Title :
A GaAs MMIC LNA design for wideband satellite communication receiver application
Author_Institution :
13th Res. Inst., CETC, Shijiazhuang, China
Abstract :
A S-Band MMIC LNA for satellite communication system is designed with cascade feedback structure and fabricated using 0.15-um GaAs pHEMT process. The small signal gain of the LNA is 22dB at room temperature. The gain flatness is less than 2dB among the whole bandwidth. The typical noise figure is less than 1.4dB at room temperature. The chip area is 1.5mm2. The return loss shows good performance while maintains noise impedance matching by applying RC feedback to traditional structure.
Keywords :
III-V semiconductors; MMIC amplifiers; cascade networks; feedback amplifiers; gallium arsenide; high electron mobility transistors; impedance matching; integrated circuit design; integrated circuit noise; low noise amplifiers; radio receivers; satellite communication; GaAs; S-band MMIC LNA design; cascade feedback structure; gain 22 dB; impedance matching; pHEMT process; size 0.15 mum; temperature 293 K to 298 K; wideband satellite communication receiver application; Gallium arsenide; Impedance matching; Loss measurement; MMICs; Microwave filters; Noise; Noise figure; GaAs Amplifier; MMIC; low noise amplifier; pseudomorphic high electron mobility transistor (pHEMT);
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062363
