Title :
A 610GHz imager In 0.18 micron CMOS process
Author :
Chengwei Jia ; Jixin Chen ; Pinpin Yan
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Abstract :
In this paper, a 610GHz imager composed of an on-chip antenna, a NMOS direct detector and an operational amplifier in 0.18 micron standard CMOS process is proposed. To satisfy the requirements of process design rules, we make some modifications to a rectangle patch antenna without lowering its performance. Based on the principle of distributed resistive self-mixing, the detector can work beyond the cutoff frequency of the technology and facilitate broadband detection. The operational amplifier makes use of a current mirror circuit to change a differential amplifier into a single-input-single-output circuit, which not only reduces common mode noise but matches the single-end antenna. According to our simulation, the imager achieves a responsivity (Rv) of 17.6 KV/W.
Keywords :
CMOS image sensors; current mirrors; differential amplifiers; interference suppression; microstrip antennas; operational amplifiers; terahertz wave detectors; terahertz wave imaging; CMOS imager; CMOS process; NMOS direct detector; broadband detection; common mode noise reduction; current mirror circuit; differential amplifier; distributed resistive self-mixing; frequency 610 GHz; on-chip antenna; operational amplifier; process design rules; rectangle patch antenna; responsivity; single input single output circuit; size 0.18 micron; Antennas; CMOS process; Detectors; Logic gates; Operational amplifiers; Plasma waves; Semiconductor device modeling; CMOS; Distributed resistive mixer; Operational amplifier; Terahertz imager;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062374
