Design and development of C-band microwave amplifier for wireless applications

This paper presents the design and development of a C-Band microwave amplifier for wireless application operating at 5.8 GHz using E-pHEMT ATF-55143 transistor. The proposed design of C-band microwave amplifier has been enhanced by adding inductors between the drain, gate of the ATF-55143 transistor and DC biasing network correspondingly, which increased the maximum power gained delivered at the output port to 12.3 dB. The impedance matching network technique has been implemented in this work which helps to obtain more accurate matching. The proposed C-band microwave amplifier biased at a Vds of 2 V and Id of 20 mA. The proposed C-Band microwave amplifier was designed and simulated using Advanced Design system (ADS) software produced by Agilent. The measurement result is comparable to the simulation´s result which is accomplishing the minimum requirements of the microwave power amplifier to be functioning properly.