• DocumentCode
    357951
  • Title

    Electroluminescence from alumina ceramics surface under low AC electric field in vacuum

  • Author

    Zhang, G.J. ; Yan, Z. ; Liu, Y.S. ; Okada, M. ; Yasuoka, K. ; Ishii, S.

  • Author_Institution
    Xi´´an Jiaotong Univ., China
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    407
  • Abstract
    The electroluminescence (EL) from a planar metal-alumina-metal structure was investigated under ac voltage applied in vacuum. Two kinds of electrode contacts, i.e., with/without sputtered gold films, showed quite different optical phenomena. For the non-sputtered samples (type A), no luminescence was detected below 4.5 kV. While for the sputtered samples (type B), from low applied voltage, there was faint and stable light emission due to EL observed. The characteristics of EL were examined in detail. It is supposed that the different electrode contacts are responsible for the interesting phenomena. A model has been proposed to distinguish their metal-alumina interface. For samples of type B, a marked reduction of the potential barrier between electrodes and alumina surface would be conducted. Thus compared with samples of type A, charge carriers can be more easily injected from the electrodes into the surface states of alumina, and EL will emit due to the radiative recombination of electrons and holes
  • Keywords
    MIM structures; alumina; ceramic insulation; electroluminescence; AC electric field; Al2O3; alumina ceramic surface; charge carrier injection; electrode contact; electroluminescence; optical properties; planar MIM structure; potential barrier; radiative recombination; sputtered gold film; surface states; Ceramics; Charge carriers; Electrodes; Electroluminescence; Gold; Low voltage; Luminescence; Optical films; Radiative recombination; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    0-7803-5459-1
  • Type

    conf

  • DOI
    10.1109/ICPADM.2000.875716
  • Filename
    875716