• DocumentCode
    358124
  • Title

    Effect of geometrical uniformity of microstructure to electrical characteristics of ZnO varistors

  • Author

    Tu, You-Ping ; Zeng, Rong ; He, Jin-Liang ; Han, Se-Won ; Cho, Han-Goo

  • Author_Institution
    Dept. of Electr. Eng., North China Electr. Eng. Univ., Beijing, China
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    737
  • Abstract
    The microstructure uniformity of ZnO varistors does not have a direct effect on the onset of the voltage upturn in the high current region. The obvious effect of improving the geometrical uniformity of ZnO varistors is to increase the global breakdown voltage and nonlinearity coefficient. Although the global breakdown voltage is directly related to the electrical characteristic uniformity of the microstructure, it is affected more easily by the breakdown path which is determined by the geometrical uniformity of microstructure. The smaller the average and standard deviation are, the more uniform the microstructure is and the better the global electrical characteristic
  • Keywords
    II-VI semiconductors; ceramics; crystal microstructure; semiconductor device breakdown; varistors; zinc compounds; ZnO; ZnO varistors; ZnO-Bi2O3-Sb2O3-Co 2O3-NiO-MnO2-Cr2O3 -Al2O3; breakdown path; electrical characteristics; geometrical uniformity; global breakdown voltage; high current region; microstructure uniformity; nonlinearity coefficient; voltage upturn onset; Additives; Breakdown voltage; Ceramics; Electric variables; Grain boundaries; Helium; Metals industry; Microstructure; Varistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    0-7803-5459-1
  • Type

    conf

  • DOI
    10.1109/ICPADM.2000.876180
  • Filename
    876180