A light spot scanner photo-current technique to measure surface recombination velocity of semiconductor

Author

Feng, Zhang ; Chen Hong Liang ; Xu Chuan Xiang

Author_Institution

Sch. of Electr. Power, Shanghai Jiaotong Univ., China

Volume

2

fYear

2000

fDate

2000

Firstpage

918

Abstract

Depending on the image method and point source approximation method, a physics model was established, and the formula of photo-current versus surface recombination velocity was obtained. Thus, a light spot scanner photo-current (PC) measurement technique is set up to measure the interface properties of a silicon p-n junction. Using this method, the interface characteristics of angle beveled mesa structure high-voltage silicon p-n junction protected by organic materials or inorganic passivation films could be measured. From the experiment results and the normalization results, the surface recombination velocities of a silicon p-n junction under different conditions are obtained, and the results can be used to evaluate its interface property

Keywords

elemental semiconductors; p-n junctions; passivation; photoconductivity; silicon; surface recombination; Si; angle beveled mesa structure high-voltage silicon p-n junction; image method; inorganic passivation films; interface characteristics; interface properties; interface property; light spot scanner photo-current technique; organic materials; photo-current; point source approximation method; semiconductor; silicon p-n junction; surface recombination velocity; Electron beams; Organic materials; P-n junctions; Passivation; Protection; Radiative recombination; Semiconductor films; Silicon; Spontaneous emission; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on

Conference_Location

Xi´an

Print_ISBN

0-7803-5459-1

Type

conf

DOI

10.1109/ICPADM.2000.876380

Filename

876380