DocumentCode
3581568
Title
European GaN device technologies for microwave and power switching applications
Author
Wurfl, Joachim
Author_Institution
Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin - Germany
fYear
2014
Firstpage
917
Lastpage
919
Abstract
An overview on European GaN technologies towards high power microwave and high voltage power switching applications is presented. It contains a survey on the most important technological approaches, device performance data and reliability achievements. A special emphasis is devoted to the GaN technologies available at Ferdinand-Braun-Institut (FBH), Berlin.
Keywords
Decision support systems; Electron devices; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Physics; Gallium nitride; gallium nitride epitaxy; gallium nitride technology; microwave devices; power electronic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7067577
Link To Document