DocumentCode :
3581568
Title :
European GaN device technologies for microwave and power switching applications
Author :
Wurfl, Joachim
Author_Institution :
Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin - Germany
fYear :
2014
Firstpage :
917
Lastpage :
919
Abstract :
An overview on European GaN technologies towards high power microwave and high voltage power switching applications is presented. It contains a survey on the most important technological approaches, device performance data and reliability achievements. A special emphasis is devoted to the GaN technologies available at Ferdinand-Braun-Institut (FBH), Berlin.
Keywords :
Decision support systems; Electron devices; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Physics; Gallium nitride; gallium nitride epitaxy; gallium nitride technology; microwave devices; power electronic devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
Type :
conf
Filename :
7067577
Link To Document :
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