Novel thermal management and its analysis in GaN electronics

GaN in microwave and power electronics enables performances of systems and their safe operating area to be driven to ´extremes´. When this challenge is taken up, thermal management is one of the major issues to be addressed. This includes heat transfer limitations across interfaces, however also the potential of incorporating novel materials such as diamond and also bulk GaN into GaN electronics to improve thermal management and device reliability. Thermal parameters of these novel device systems and their implications on the channel temperature in the devices are however at present often not well known. Our latest results in this field are presented.