142 GHz Schottky diode mixer in CMOS 0.13-µm

A 142 GHz CMOS Schottky diode mixer is presented. The diode is realized by the 0.13-µm CMOS 1P8M process. The theoretical I/V curves indicated the trade-off between reducing the turn-on voltage and elevating the cutoff frequency of the Schottky diode. In the mixer design, the diodes are biased with the DC voltage to reduce the power consumption of the LO signal. The RF and LO signal feed into the diodes through the transmission-line based 180° hybrid. The measurements show that the average conversion-loss the mixer prototype is about 17.6 dB from 130 GHz to 150 GHz when the power of the LO signal is set as 0 dBm at 142 GHz.