• DocumentCode
    3581636
  • Title

    A 1.5 GHz GaN HEMT fifth-harmonic-peaking Class-EF power amplifier with 85% drain efficiency and 42 dBm output power

  • Author

    Thian, Mury ; Barakat, Ayman ; Fusco, Vincent

  • Author_Institution
    ECIT Institute, The Queen´s University of Belfast, United Kingdom
  • fYear
    2014
  • Firstpage
    1001
  • Lastpage
    1003
  • Abstract
    In this paper, we present the design and implementation of a new variant of Class-EF PA, the so-called fifth-harmonic-peaking Class-EF. It inherits soft-switching operation from the Class-E PA and low peak switch voltage from the Class-F PA. The new topology also allows operations at higher frequencies and permits deployment of large transistors. Further, by employing novel λ/8 open and shorted stub arrangements, the PA is able to facilitate better even harmonic suppression leading to improved PA efficiency. Measured peak drain efficiency of 85% and output power of 42 dBm were obtained at 1.5 GHz. Across a 300 MHz frequency range i.e. 20% bandwidth, the PA delivered output power >40 dBm with drain efficiency >65%.
  • Keywords
    Capacitance; Gallium nitride; HEMTs; Harmonic analysis; Power amplifiers; Power generation; Class-E; Class-EF; Class-F; GaN; HEMT; fifth-harmonic-peaking; power amplifier; transmission line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2014 Asia-Pacific
  • Type

    conf

  • Filename
    7067645