DocumentCode
3581637
Title
Two signal power level design for shunt-connected type GaN HEMT Doherty power amplifier without a quarter-wave inverter
Author
Iguchi, Yosuke ; Takayama, Yoichiro ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution
The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
fYear
2014
Firstpage
1004
Lastpage
1006
Abstract
A 1.9-GHz shunt-connected-type GaN HEMT Doherty power amplifier without a quarter-wave inverting network is designed and fabricated by introducing a two- RF- level circuit design procedure. Matching circuits for the carrier and peaking amplifiers are designed to realize optimum efficiency at low-RF (peaking amplifier off) and high-RF (saturated) signal levels. The compact amplifier achieved a maximum power added efficiency (PAE) higher than 50% at the 310-MHz bandwidth. The maximum PAE at an output power above 30 dBm was higher than 50% within the 1.68–1.99 GHz frequency range. A PAE higher than 40% at a 6-dB back-off from input power achieving maximum PAE was obtained over a wide frequency range of 1.67–1.99 GHz.
Keywords
Gallium nitride; HEMTs; Impedance; Power amplifiers; Power generation; Radio frequency; Topology; Doherty amplifier; GaN HEMT; Microwave power amplifier; broadband power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7067646
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