Title :
An improved AgilentHBT model for InP DHBT
Author :
Li, Oupeng ; Wang, Lei ; Cheng, Wei ; Lu, Haiyan ; Gu, Guohua ; Zhang, Jian ; Xu, Ruimin
Author_Institution :
Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu, 611731, China
Abstract :
In this paper, an improved InP/InGaAs DHBT large-signal model based on the AgilentHBT model is reported. The collector current model is modified for the consideration of hetero-junction effect, and especially, a dispersion current item is put forward and incorporated into the equivalent circuit. The proposed model is implemented by the use of symbolically-defined devices (SDD) in ADS software. The excellent fitting results in DC and s-parametmers indicate that the modified model has better accuracy compared to the conventional one.
Keywords :
Decision support systems; Microwave circuits; Microwave integrated circuits; Microwave transistors; Noise measurement; Radiofrequency integrated circuits; AgilentHBT model; InP/InGaAs DHBT; SDD model; dispersion; hetero-junction effect;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
