• DocumentCode
    3581775
  • Title

    70W C-band GaN solid state power amplifier for satellite use

  • Author

    Hirano, T. ; Shibuya, A. ; Kawabata, T. ; Kido, M. ; Yamada, K. ; Seino, K. ; Ichikawa, A. ; Kamikokura, A.

  • Author_Institution
    Space System & Electronic Engineering Department, Mitsubishi Electric TOKKI Systems Corporation, 730-11 Kamimachiya Kamakura-City Kanagawa 247-0065, JAPAN
  • fYear
    2014
  • Firstpage
    783
  • Lastpage
    785
  • Abstract
    70W C-band gallium nitride solid state power amplifier (GaN SSPA) was designed and manufactured for satellite use. GaN devices have been already used for various fields from lower frequency bands (L-band and S-band) such as ground station amplifier and radar system. For space application, expectation has been raised for replacing traveling wave tube amplifiers (TWTAs) with GaN SSPAs. Development result shows that, with an electrical power conditioner (EPC), the GaN SSPA achieved output power of 69.4W with power added efficiency (PAE) of 38.9%. Moreover, footprint and mass of this SSPA are much less than those of TWTA. Mitsubishi Electric TOKKI Systems (MELOS) shipped the 70W C-band GaN SSPA to the customer in 2013 for MELOS´s first flight model.
  • Keywords
    Gallium nitride; Microwave amplifiers; Microwave communication; Power amplifiers; Radio frequency; Satellite communication; Gallium compounds; High power amplifiers; Microwave power FET amplifiers; RF power circuits; Satellite communication; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2014 Asia-Pacific
  • Type

    conf

  • Filename
    7067784