Title :
A high efficiency GaN HEMT high power amplifier at L-band
Author :
Kosaka, N. ; Kuwata, E. ; Hangai, M. ; Yamanaka, K. ; Yamasaki, T. ; Koyama, H.
Author_Institution :
Electro-Optics & Microwave Electronics Technology Dept., Mitsubishi Electric Corporation, 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan
Abstract :
A high efficiency and high power amplifier (HPA) using GaN HEMTs at L-band is presented. This HPA is composed of the GaN HEMTs, and input and output matching networks on substrates with high dielectric constants. All parts are assembled in a metal package. With a 2-stage impedance transformation at the output and a second harmonic termination at the input, more than 55 W of output power, 69.5% of power added efficiency (PAE) and 15.4 dB of power gain were maintained over 7% relative bandwidth at L-band.
Keywords :
Gallium nitride; HEMTs; Harmonic analysis; Impedance; Impedance matching; L-band; Power amplifiers; GaN; HPA; L-band; compact; high efficiency; wideband;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
