• DocumentCode
    3581827
  • Title

    Mitsubishi Electric´s GaN devices employed in infrastructure systems

  • Author

    Yamanaka, Koji

  • Author_Institution
    Mitsubishi Electric Corporation, Japan
  • fYear
    2014
  • Firstpage
    555
  • Lastpage
    557
  • Abstract
    In this article, GaN related development activities of Mitsubishi Electric Corporation and their utilization in the infrastructure systems are described. Since the world´s first C-band GaN amplifier with 140W output power was reported in IMS2004, Mitsubishi Electric has developed many GaN high power amplifiers and commercialized some GaN devices. Also those GaN devices have been applied to solid state weather radar systems, satellite communication systems, and microwave power transmission systems etc. Brief introduction of such activities will be given. Finally, some possible application fields for GaN devices will be discussed.
  • Keywords
    Gallium nitride; Microwave FET integrated circuits; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Spaceborne radar; GaN; high power amplifier; satellite news gathering; weather radar;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2014 Asia-Pacific
  • Type

    conf

  • Filename
    7067836