DocumentCode
3581827
Title
Mitsubishi Electric´s GaN devices employed in infrastructure systems
Author
Yamanaka, Koji
Author_Institution
Mitsubishi Electric Corporation, Japan
fYear
2014
Firstpage
555
Lastpage
557
Abstract
In this article, GaN related development activities of Mitsubishi Electric Corporation and their utilization in the infrastructure systems are described. Since the world´s first C-band GaN amplifier with 140W output power was reported in IMS2004, Mitsubishi Electric has developed many GaN high power amplifiers and commercialized some GaN devices. Also those GaN devices have been applied to solid state weather radar systems, satellite communication systems, and microwave power transmission systems etc. Brief introduction of such activities will be given. Finally, some possible application fields for GaN devices will be discussed.
Keywords
Gallium nitride; Microwave FET integrated circuits; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Spaceborne radar; GaN; high power amplifier; satellite news gathering; weather radar;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7067836
Link To Document