DocumentCode :
3581827
Title :
Mitsubishi Electric´s GaN devices employed in infrastructure systems
Author :
Yamanaka, Koji
Author_Institution :
Mitsubishi Electric Corporation, Japan
fYear :
2014
Firstpage :
555
Lastpage :
557
Abstract :
In this article, GaN related development activities of Mitsubishi Electric Corporation and their utilization in the infrastructure systems are described. Since the world´s first C-band GaN amplifier with 140W output power was reported in IMS2004, Mitsubishi Electric has developed many GaN high power amplifiers and commercialized some GaN devices. Also those GaN devices have been applied to solid state weather radar systems, satellite communication systems, and microwave power transmission systems etc. Brief introduction of such activities will be given. Finally, some possible application fields for GaN devices will be discussed.
Keywords :
Gallium nitride; Microwave FET integrated circuits; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Spaceborne radar; GaN; high power amplifier; satellite news gathering; weather radar;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
Type :
conf
Filename :
7067836
Link To Document :
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