A 10 MHz–12 GHz low-distortion high-speed SP4T switch using GaN HEMTs with oxynitride TaON passivation

This paper describes a 10 MHz –12 GHz low distortion high speed single pole 4 throw (SP4T) switch for RF Automated Test Equipment (ATE) using a newly developed GaN HEMT fabrication process. The switch is fabricated with the Schottky GaN HEMT process which feature very low gate leakage current with tantalum oxynitride (TaON) passivation films to improve distortion performances at low frequency. The switch has high input 3rd order intercept point (IP3) of more than 52 dBm across a frequency range of 10 MHz to 12 GHz and fast settling time of less than 10 µs to within 0.01 dB. An on-chip decode logic with TTL level input for the state control is also integrated.