DocumentCode
3581853
Title
79 GHz CMOS power amplifier considering time- and temperature-degradation model
Author
Yoshida, Takeshi ; Takano, Kyoya ; Li, Chen yang ; Katayama, Kosuke ; Amakawa, Shuhei ; Fujishima, Minoru
Author_Institution
Graduate School of Advanced Sciences of Matter, Hiroshim a University, 1-3-1 Kagamiyama Higashi, Japan
fYear
2014
Firstpage
637
Lastpage
639
Abstract
This paper reports a CMOS power amplifier (PA) designed considering the performance degradation of MOSFETs caused by both temperature variations and the hot-carrier effect. A small-signal MOSFET model that reproduces the transient degradation caused by the hot-carrier effect is proposed. A 79 GHz CMOS PA was designed utilizing the proposed small-signal model. Simulation results agreed well with the measurement results of the PA fabricated with a 40 nm CMOS technology. It achieved the small-signal gain variations of below 0.7 dB and the OP1dB degradation of less than 0.8 dB in the temperature range of 0°C to 100°C.
Keywords
Circuit synthesis; Decision support systems; Millimeter wave circuits; Radiofrequency integrated circuits; hot-carrier effect; millimeter-wave; power amplifier; small-signal model; temperature compensation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7067862
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