Title :
The experimental study of THz image sensor in 0.18 µm CMOS technology
Author :
Lai, Chih-Wei ; Chen, Wei-Cheng ; Yan, Tzu-Chao ; Li, Chun-Hsing ; Kuo, Chien-Nan
Author_Institution :
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan
Abstract :
In this study, four different types of power detectors are implemented in 0.18 µm CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common-gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm.
Keywords :
Abstracts; Cities and towns; Decision support systems; Electrical engineering; Finite element analysis; Hafnium; Solid state circuits; CMOS; THz image; power detector; responsivity;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
