Title :
Low noise amplifier MMICs for 325 GHz radiometric applications
Author :
Diebold, S. ; Kuhn, J. ; Hulsmann, A. ; Leuther, A. ; Dahlberg, K. ; Jukkala, P. ; Kantanen, M. ; Kallfass, I. ; Zwick, T. ; Narhi, T.
Author_Institution :
Osaka University, Graduate School of Engineering Science, 1-3 Machikaneyama, Toyonaka 560-8531, Japan
Abstract :
For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.
Keywords :
Bandwidth; Gain; MMICs; Noise measurement; Transmission line measurements; mHEMTs; HEMTs; LNA; MMIC amplifiers; MMICs; Microwave amplifiers; Millimeter wave devices; Millimeter wave integrated circuits; cascode configuration; common-source transistors; low noise amplifiers; noise figure (NF); sub-millimeter-wave amplifier;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
