Title :
Shunt characterization technique of decoupling transmission line for millimeter-wave CMOS amplifier design
Author :
Tokgoz, Korkut Kaan ; Lim, Kimsrun ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S3-27, Oookayama, Meguro-ku, 152-8552, Japan
Abstract :
A shunt characterization method is proposed to characterize a very low impedance transmission line (TL), which is used for decoupling of DC and RF in millimeter-wave CMOS circuits. Since metal-insulator-metal (MIM) capacitors are used to achieve very low impedance the TL named as MIM TL. Two structures are used for this method. S-parameters of MIM TL are calculated using reflections. The results match better than direct measurement method from 1 to 110 GHz.
Keywords :
Abstracts; Hafnium; Very large scale integration; CMOS; decoupling; device characterization; metal-insulator-metal; mm-wave; transmission line;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
