Title :
Pure-play GaN foundry technology for RF applications
Author :
Lin, Che-Kai ; Du, Jhih-Han ; Wang, Albert ; Peng, Sheng-Wen ; Chen, Chao-Hung ; Chen, Chai-Hao ; Chou, Tung-Yao ; Wang, Wei-Chou ; Wu, Jya-Shian ; Kuo, Richard ; Huang, Clement ; Cho, I-Te ; Wohlmuth, Walter ; Takatani, Shinichiro
Author_Institution :
WIN Semiconductors Corp., No. 35, Technology 7th Rd., Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, 333, R.O.C.
Abstract :
This paper presents the development of a newly available GaN HEMT technology portfolio and focuses on fabrication, RF characterization, reliability performance and device modeling. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests. The GaN HEMT technologies enable power amplifier, low-noise amplifier, and RF switch products utilizing supply voltages of 28V and 50V and operational frequencies extending from IEEE standard L- to Ku-band.
Keywords :
Gain; Gallium nitride; HEMTs; Logic gates; MMICs; Radio frequency; AlGaN/GaN; MMIC; MTTF; PA; T-gate; field-plate;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
