A W-band 100 nm InP HEMT ultra low noise amplifier

In this paper, we demonstrate a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that achieves an average gain of 30 dB and an average noise figure of 1.9 dB in W-band from 80 to 100 GHz. Within the 92 to 96 GHz frequency range, the LNA achieves an average noise figure of 1.75 dB. The LNA was designed using Northrop Grumman Corporation´s (NGC) qualified 100 nm InP HEMT technology. To our knowledge, this performance demonstrates the best noise figure performance in W-band for a qualified technology.