Parasitic elements extraction of AlGaN/GaN HEMTs on SiC substrate using only pinch-off S-parameter measurements

Author

Jarndal, Anwar

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Sharjah, Sharjah, United Arab Emirates

fYear

2014

Firstpage

13

Lastpage

16

Abstract

In this paper, a parameter extraction method for GaN HEMTs is developed. The main advantage of this approach is its accuracy, reliability and dependence on only pinch-off Sparameter measurements to extract the parasitic elements of the device. The extraction results are compared with other extraction results based on pinch-off and forward measurements. The comparison result demonstrates the validity of the proposed method for small- and large-signal modeling of GaN devices.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HEMT; SiC; forward measurement; large-signal modeling; parasitic element extraction method; pinch-off S-parameter measurement; reliability; small-signal modeling; Electrical resistance measurement; Frequency measurement; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Scattering parameters; GaN HEMT; computer aided analysis; parameter extraction; semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2014 26th International Conference on

Type

conf

DOI

10.1109/ICM.2014.7071794

Filename

7071794