Title :
A 0.6-V/1.2-V low power single ended CMOS LNA for multi-standard RF front-ends
Author :
Slimane, Abdelhalim ; Tedjini, Sid ; Taibi, Abdelkader ; Belaroussi, Mohand ; Maafri, Djabar
Author_Institution :
Centre de Dev. des Technol. Av., Algiers, Algeria
Abstract :
This paper presents a design of a low power single ended CMOS LNA for reconfigurable applications including GPS, GSM (DCS1800, PCS1900), 3G (UMTS), WLAN b/g and LTE. Based on a wideband input matching, the LNA stages cover all band of interest while achieving a good trade-off between high gain, low noise figure and low power consumption. For multi-standard aim, the LNA selects the desired bands using a high output resonant impedance with a switching technique. Implemented in 0.13-μm CMOS technology, the simulated LNA results at Vdd = 1.2 V perform a power gain higher than 30 dB, a noise figure below 2.3 dB, an input return loss less than -12 dB, and an IIP3 better than -19 dBm in frequency band 1.5-2.6 GHz. Besides, for the low mode at Vdd = 0.6 V, the power gain is better than 19 dB and the noise figure is about 2.9 dB. For all mentioned standards, the proposed LNA consumes 7.5 mW and 2.7 mW from supply voltage of 1.2 V and 0.6 V, respectively.
Keywords :
CMOS integrated circuits; low noise amplifiers; power consumption; IIP3; frequency 1.5 GHz to 2.6 GHz; low power single ended CMOS LNA; multistandard RF front-end; noise figure; power 2.7 mW; power 7.5 mW; power consumption; resonant impedance; return loss; size 0.13 mum; switching technique; voltage 0.6 V; voltage 1.2 V; wideband input matching; 3G mobile communication; CMOS integrated circuits; Gain; Noise; Radio frequency; Standards; Wireless communication; CMOS; Reconfigurable; cascode; low noise amplifier; multi-standard;
Conference_Titel :
Microelectronics (ICM), 2014 26th International Conference on
DOI :
10.1109/ICM.2014.7071808