Title :
Self-biased resistive-feedback current-reused CMOS UWB LNA with 1.7dB nf for IR-UWB applications
Author :
Erfani, Reza ; Marefat, Fatemeh ; Ehsanian, Mehdi
Author_Institution :
Fac. of Electr. Eng., K.N. Toosi Univ. of Technol., Tehran, Iran
Abstract :
In this paper, a self-biased resistive-feedback current-reused CMOS low-noise amplifier (LNA) is presented for impulse-radio ultra-wideband (IR-UWB) applications. Wideband input, inter-stage, and output matching are achieved by using two stages of resistive-feedback amplifiers with inductive peaking. Consequently, high and flat power gain (S21), low and highly-flat noise figure (NF), and small group-delay variation are simultaneously achieved. By employing resistive-feedback, not only wideband matching is guaranteed, but also both stages adopt self-biasing technique (power and area saving) which totally removes noise contribution of bias circuitry at the input (better NF performance). As a result, state-of-the-art NF of 1.7dB (@7GHz) is achieved where across the whole frequency band of interest (i.e., 3-11GHz) NF remains below 2 dB. A flat S21 of 12.9±0.45dB and small group-delay variation of 68.5±17.5ps are also achieved. The proposed UWB LNA dissipates 10.35mW under supply of 1.5V in 0.18μm CMOS technology.
Keywords :
CMOS integrated circuits; feedback amplifiers; low noise amplifiers; microwave amplifiers; ultra wideband communication; IR-UWB applications; UWB LNA; bias circuitry; frequency 3 GHz to 11 GHz; impulse-radio ultrawideband applications; inductive peaking; noise contribution; power 10.35 mW; resistive-feedback amplifiers; self-biased resistive-feedback current-reused CMOS low-noise amplifier; self-biasing technique; size 0.18 mum; voltage 1.5 V; wideband matching; CMOS integrated circuits; Capacitors; Gain; Impedance matching; Noise measurement; Receivers; Wideband;
Conference_Titel :
Microelectronics (ICM), 2014 26th International Conference on
DOI :
10.1109/ICM.2014.7071824