The effect of defect on thermal conductance of single layer graphene transistor

Graphene is a promising new material for the construction of field effect based transistor because of its surface modification can tune the band gap. In this paper, the performance of single layer pristine graphene (SLPG) and single layer with single vacancy graphene (SLSVG) is investigated. Both physical and electrical properties of the graphene field effect (GFET) are simulated using the Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. The conductance and thermal conductance characteristic for both graphene are compared. From the simulation, it is found that single layer with single vacancy performs better in conductance and thermal conductance. The results obtained will give standpoint in the implementation of `defect graphene´ for performance enhancement in future electronic devices.