DocumentCode :
35826
Title :
Improved Rear-Side Passivation by Atomic Layer Deposition 
Stack Layers for High  p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature thermal atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> layers and plasma-enhanced chemical vapor deposition of SiN<sub>x</sub> passivation layers. An increase in the V<sub>OC</sub> and the short-circuit current (JSC) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm<sup>2</sup>) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>alumina; atomic layer deposition; cryogenic electronics; passivation; short-circuit currents; silicon; silicon compounds; solar cells; Al<sub>2</sub>O<sub>3</sub>-SiN<sub>x</sub>; atomic layer deposition stack layers; in-line solar cell manufacturing; industrial p-type silicon solar cells; long-wavelength response; low temperature thermal atomic layer deposition; minority carrier lifetime; open-circuit voltage p-type industrial screen-printed silicon solar cells; optimized stack layers; passivation layers; plasma-enhanced chemical vapor deposition; rear surface passivation; rear-side passivation scheme; screen-printed process; short-circuit current; Aluminum oxide; Atomic layer deposition; Charge carrier lifetime; Passivation; Photovoltaic cells; Silicon; <formula formulatype=)
${rm Al}_{2}{rm O}_{3}/{rm SiN}_{x}$ stack layers; negative fixed charge; open-circuit voltage; surface passivation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2271894
Filename :
6558507
Link To Document :
