Title :
Surface conditions and electrical breakdown characteristics of ozonized water treated copper electrodes of a vacuum gap
Author :
Kobayashi, S. ; Sekikawa, K. ; Asano, K. ; Saito, Y.
Author_Institution :
Dept. of Electr. & Electron. Eng., Saitama Univ., Urawa, Japan
Abstract :
Ozonized water treatment has the advantages that organic contaminants can be removed to produce a passivated oxidized film on the surface and the treated surface condition can be kept in air. This technique has been applied to the surface treatment of oxygen-free copper electrodes. Experimental results revealed that the breakdown field at the 1st application of voltage was not always improved, but a significant conditioning effect was obtained without any in-situ precautions. Moreover, additional in-situ sputter cleaning on the ozonized water treated surface improved the 1st breakdown field. Surface analysis clarified that after the ozonized water treatment, the electrode surface was covered with an oxidized film (CuO) and this film was removed to expose bulk copper after conditioning by 500 repetitive breakdowns caused by applying impulse voltages. These results can be attributed to the characteristic that the treated surface can be kept in air
Keywords :
copper; electrodes; surface cleaning; surface treatment; vacuum breakdown; vacuum insulation; Cu; CuO; breakdown field; conditioning effect; electrical breakdown characteristics; impulse voltages; in situ sputter cleaning; organic contaminants; oxidized film; oxygen-free copper electrodes; ozonized water treated copper electrodes; ozonized water treated surface; passivated oxidized film; repetitive breakdowns; surface analysis; surface condition; surface conditions; surface treatment; vacuum gap; Breakdown voltage; Copper; Electric breakdown; Electrodes; Surface cleaning; Surface contamination; Surface treatment; Vacuum breakdown; Vacuum systems; Water pollution;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2000. Proceedings. ISDEIV. XIXth International Symposium on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5791-4
DOI :
10.1109/DEIV.2000.877250