Title :
On the role of nonmetal inclusions at the cathode surface in the initiation and self-sustaining of a vacuum discharge
Author :
Barengolts, S.A. ; Barengolts, Yu.A.
Author_Institution :
Inst. of Electrophys., Acad. of Sci., Ekaterinburg, Russia
Abstract :
Emission processes are treated for the case where dielectric and semiconductor microinclusions are present on the surface of a metal cathode. It has been shown that the emission current-voltage characteristic plotted in the Fowler-Nordheim coordinates is close to a straight line corresponding to a high field enhancement factor. A stationary problem on the heating of a nonmetal microprotrusion by the field emission current has been solved. Calculations have shown that for explosive emission processes to be initiated in this case, lower critical currents and lower Joule energy spatial densities are required then in the case of metal microprotrusions on a cathode. This is the reason why the initiation of a vacuum discharge and its operation at the early stage occur at those sites where nonmetal inclusions are present. For a vacuum arc discharge, the required electric field strength is achieved through the charging of the surface of a nonmetal inclusion by the ion current from the arc plasma
Keywords :
cathodes; electric fields; field emission; inclusions; plasma; vacuum arcs; Fowler-Nordheim coordinates; Joule energy spatial densities; arc plasma; cathode surface inclusions; critical currents; dielectric microinclusions; electric field strength; emission current-voltage characteristic; emission processes; explosive emission processes; field emission current; field enhancement factor; ion current; self-sustaining vacuum discharge; semiconductor microinclusions; vacuum arc discharge; vacuum discharge initiation; Arc discharges; Cathodes; Critical current; Current-voltage characteristics; Dielectrics; Explosives; Heating; Surface charging; Surface treatment; Vacuum arcs;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2000. Proceedings. ISDEIV. XIXth International Symposium on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5791-4
DOI :
10.1109/DEIV.2000.877254