Influence of sintering temperature on the flashover performance of alumina insulators in vacuum

Author

Ding, Lijian ; Li, C.R. ; Wang, Jingchun ; Wang, Wei

Author_Institution

Dept. of Electr. Eng., North China Electr. Power Univ., Beijing, China

Volume

1

fYear

2000

fDate

2000

Firstpage

98

Abstract

Investigates the influence of sintering conditions on the flashover/preflashover characteristic of alumina insulators in vacuum under an impulse voltage. Four kinds of alumina insulator were studied and they were prepared using a same formula with different sintering conditions. The phenomena of surface pre-flashover and flashover in vacuum have been observed. Based on the experimental results, the characteristics of preflashover and flashover are varied with different kinds of test samples. It was found that the insulators with higher sintering temperature could have a lower flashover voltage, and more active preflashover. According to the analysis of scanning electron microscope (SEM) of alumina insulator, it is considered that the methods to prepare alumina samples can effect the microstructure and the preflashover and flashover performance of alumina insulators

Keywords

alumina; dielectric materials; flashover; insulating materials; scanning electron microscopy; sintering; surface discharges; vacuum breakdown; vacuum insulation; Al₂O₃; alumina insulator; alumina insulators; alumina samples; flashover; flashover characteristics; flashover performance; flashover voltage; impulse voltage; microstructure; preflashover; preflashover characteristics; scanning electron microscope; sintering conditions; sintering temperature; surface pre-flashover; test samples; vacuum; Circuit testing; Dielectrics and electrical insulation; Electrodes; Flashover; Insulator testing; Optical surface waves; Scanning electron microscopy; Temperature; Vacuum systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum, 2000. Proceedings. ISDEIV. XIXth International Symposium on

Conference_Location

Xi´an

Print_ISBN

0-7803-5791-4

Type

conf

DOI

10.1109/DEIV.2000.877265

Filename

877265