Direct Generation of Subnanosecond Ince–Gaussian Modes in Microchip Laser

Author

Shuo Han ; Yanqing Liu ; Fang Zhang ; Ying Zhou ; Zhengping Wang ; Xinguang Xu

Author_Institution

State Key Lab. of Crystal Mater., Shandong Univ., Jinan, China

Volume

7

Issue

1

fYear

2015

fDate

Feb. 2015

Firstpage

1

Lastpage

6

Abstract

In this paper, a new method is used to direct generate Ince-Gaussian (IG) modes from a pulsed solid-state microchip laser. By moving a circular aperture horizontally, the gain size in the laser medium is adjusted, and different IG laser modes are obtained successively. The output laser possesses a stable pulse duration of 500-600 ps; at the same time, the repetition frequency varies between 7 and 16 kHz. To our knowledge, this is the first time that IG modes are obtained in the subnanosecond laser domain, which will be helpful for making large-energy high-peak-power devices.

Keywords

laser beams; laser modes; microchip lasers; circular aperture; direct generation; frequency 7 kHz to 16 kHz; gain size; laser medium; output laser; pulse duration; pulsed solid-state microchip laser; repetition frequency; subnanosecond Ince-Gaussian modes; time 500 ps to 600 ps; Laser beams; Laser excitation; Laser modes; Microchip lasers; Power lasers; Pump lasers; Semiconductor lasers; Ince???Gaussian mode; InceGaussian mode; microchip laser; sub-nanosecond pulse; subnanosecond pulse;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2015.2396905

Filename

7021903