Silicon detector system for high rate EXAFS application

Author

Pullia, A. ; Kraner, H.W. ; Siddons, D.P. ; Furenlid, L.R. ; Bertuccio, G.

Author_Institution

Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy

Volume

1

fYear

1994

Firstpage

463

Abstract

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35°C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35°C. At room temperature (25°C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications

Keywords

EXAFS; X-ray detection; X-ray spectrometers; silicon radiation detectors; -35 to 25 C; 230 eV; 350 to 380 eV; EXAFS; Peltier cells; Si; X-ray spectroscopic measurements; energy resolution; extended X-ray absorption fine structure applications; multichannel silicon pad detector; reverse currents; shot noise contribution; Cooling; Electromagnetic wave absorption; Electrons; Energy measurement; Energy resolution; Silicon; Spectroscopy; Temperature; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record

Print_ISBN

0-7803-2544-3

Type

conf

DOI

10.1109/NSSMIC.1994.474340

Filename

474340