Title :
Ultrafast intersubband transitions at λ ∼ 1.35-1.55 μm in GaN/AlGaN multiple quantum wells
Author :
Gmachl, C. ; Ng, Hock M. ; Baldwin, K.W. ; Cho, Andrew Y.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
We present measurements of intersubband transitions in the communications wavelength range using GaN/AlGaN heterostructures that have multiple single and coupled quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical communication equipment; semiconductor quantum wells; 1.35 to 1.55 micron; GaN-AlGaN; GaN/AlGaN heterostructures; GaN/AlGaN multiple quantum wells; communications wavelength range; coupled quantum wells; intersubband transitions measurements; single quantum wells; ultrafast intersubband transitions; Absorption; Aluminum gallium nitride; Doping profiles; Electrons; Gallium nitride; Least squares methods; Nominations and elections; Optimized production technology; Quantum well devices; Solids;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036180
