DocumentCode
3584598
Title
Ultrafast intersubband transitions at λ ∼ 1.35-1.55 μm in GaN/AlGaN multiple quantum wells
Author
Gmachl, C. ; Ng, Hock M. ; Baldwin, K.W. ; Cho, Andrew Y.
Author_Institution
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fYear
2002
Firstpage
27
Abstract
We present measurements of intersubband transitions in the communications wavelength range using GaN/AlGaN heterostructures that have multiple single and coupled quantum wells.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical communication equipment; semiconductor quantum wells; 1.35 to 1.55 micron; GaN-AlGaN; GaN/AlGaN heterostructures; GaN/AlGaN multiple quantum wells; communications wavelength range; coupled quantum wells; intersubband transitions measurements; single quantum wells; ultrafast intersubband transitions; Absorption; Aluminum gallium nitride; Doping profiles; Electrons; Gallium nitride; Least squares methods; Nominations and elections; Optimized production technology; Quantum well devices; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN
1-55752-701-6
Type
conf
DOI
10.1109/OFC.2002.1036180
Filename
1036180
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