Title :
Analysis and modeling of the magnetic near fields emited by an IGBT and by a power diode generic radiating model for active components
Author :
Labiedh, Walid ; Ben Hadj Slama, Jaleleddine
Author_Institution :
ENISo, Univ. of Sousse, Sousse, Tunisia
Abstract :
In this paper, we present the modeling of radiating emissions of an IGBT and of a power diode. Firstly, we have introduced the technique of measuring the magnetic near field. Secondly, we have studied the magnetic field radiated above an IGBT and the modeling method. The latter is an electromagnetic inverse method based on genetic algorithms. We have applied our method to find an equivalent radiating model of an IGBT. Another model has been developed for a power diode. The models for the two components have been validated. A generic model for the active components has been finally proposed at the end of the paper.
Keywords :
genetic algorithms; insulated gate bipolar transistors; inverse problems; magnetic fields; power semiconductor diodes; semiconductor device models; IGBT; electromagnetic inverse method; equivalent radiating model; genetic algorithms; magnetic near field; power diode; radiating emissions modeling; Frequency measurement; Insulated gate bipolar transistors; Integrated circuit modeling; Magnetic field measurement; Magnetic fields; Magnetic resonance imaging; Semiconductor device modeling; Diode; IGBT; Magnetic near field; radiating model;
Conference_Titel :
Electrical Sciences and Technologies in Maghreb (CISTEM), 2014 International Conference on
DOI :
10.1109/CISTEM.2014.7076992
